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| 摘要: |
| 提山了一个新的直流反应溅动力学模型。该模型能够比现有模型更全面地预测稳态及各种因素对稳态的影响。例如，对稳态反应溅射时反应气体分压与流量的关系，现有模型只能给出流量随分压变化的部分情况，而动力学模型能够预测完整的滞后效应曲线。动力学模型还对反应溅射中的几个基本现象(稳态跃变、滞后现象和异常稳态)的物理本质提出了新的见解。论文对薄膜成分控制做了一些探索，并在理论研究结果指导下制备了TiAlOx太阳能选择性吸收膜。 |
| 关键词: 稳态 指导 反应溅射 影响 预测 因素 制做 分压 滞后现象 跃变 |
| DOI： |
| 分类号:TG174.444 TN304 |
| 基金项目: |
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| Reactive Sputtering Modeling and Its Applications |
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Zhu Shenglong Wang Fuhui Wu Weitao
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| Abstract: |
| A novel kinetics model for dc reactive sputtering was proposed. The kinetics model is able to predict the processes more comprehensively than any other proposed model, For example, the kinetics model can predict the whole curves for the hysteresis effect of the relationship between the reactive gas pedial pressure and the reactive gas flow. However, the model proposed by Shinoki and Toh could only predict half part of the curves .Another widely accepted reactive model proposed by Berg,et. al. gave a S-shaped curve, not exactly as the experimenta11y measured curve.Numerical studies were carried out to get further understanding of several basic phenomena in reactive sputtering, such as transition of steady state, hysteresis effect, and, abnormal steady states. Exploration of possible methods to deposit films with arbitrary composition by dcreactive sputtering was performed as well. Based on the theoretical results in this paper, selective soIar films were prepared using a nAl target in Ar+o2 mixture, and their stfuctures and optical propefties were characterized. |
| Key words: Reactive sputtering, Kinetics modeling,Thin film |
